| 摘要 |
A ferroelectric capacitor ( 42 ) is formed over a semiconductor substrate ( 10 ), and thereafter, a barrier film ( 46 ) directly covering the ferroelectric capacitor ( 42 ) is formed. Then, an interlayer insulating film ( 48 ) is formed and flattened. Then, an inclined groove is formed in the interlayer insulating film ( 48 ), and a barrier film ( 50 ) is formed over the entire surface.
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