| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to decrease a dark current by effectively removing a dangling bond from both an optical black region and an active pixel region. An active pixel region and an optical black region are defined on a semiconductor substrate. Line patterns(320) are formed to be apart from the semiconductor substrate corresponding to the active pixel region and the optical black region. A dummy pattern(340) is formed on the semiconductor substrate corresponding to the optical black region at the same level as the line pattern. The dummy pattern is spaced from the line pattern. A light-shielding line pattern(352) is formed to be apart from the line and dummy patterns over the line and dummy patterns on the optical black region. The light-shielding line pattern includes an aperture, which partially opens an upper portion of the dummy pattern. An inter-metal insulation film is formed on the semiconductor substrate. The line pattern, the light-shielding line pattern, and the dummy pattern are formed in the inter-metal insulation film. A passivation film is formed on the inter-metal insulation film.
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