| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of the recovery breakdown of a reflux diode in a semiconductor device, having an insulated gate bipolar transistor and the reflux diode formed integrally. SOLUTION: A semiconductor device comprises first, third and fifth impurity regions of a first conductivity type, second and fourth impurity regions of a second conductivity type, and a control electrode layer. The second impurity region is surrounded by the first impurity region on a first main surface. The third impurity region on the first main surface and the first impurity region sandwich the second impurity region. The fourth and fifth impurity regions and the second impurity region sandwich the first impurity region on a second main surface. The control electrode layer faces the second impurity region with an insulating film, disposed therebetween. A part of the second main surface faces a part of the first main surface corresponding to the formation part of the first impurity region surrounds parts of the second main surface corresponding to the formation of the fourth and fifth impurity regions, and is either of the first or the second conduction regions, having a concentration not higher than that of the impurity concentration of the first impurity region. COPYRIGHT: (C)2008,JPO&INPIT |
