| 摘要 |
A semiconductor device containing a substrate (25, 92) and a nitrided high-k film (96) on the substrate (25, 92), and method of forming a nitrided high-k film (96). The nitrided high-k film (96) contains an oxygen-containing film and a nitrogen- containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. The nitrided high-k film (96) can optionally further contain aluminum, siiicon, or aluminum and silicon. The nitrided high-k film (96) is formed on the substrate (25, 92) by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. According to one embodiment, the method includes forming a nitrided hafnium based high-k film (96). |
