| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for raising a withstand voltage in an element terminal end region and raising the withstand voltage as a whole element, and to provide its manufacturing method. SOLUTION: The semiconductor device, which has an element region for forming a semiconductor element and a terminal end region for enclosing the element region, includes: an n++ type layer 1; an n+ type layer 2 formed on the n++ type layer 1 in the element region, where an impurity concentration is not more than that of n++ type layer 1; and an n type drift layer 3 formed on the n+ type layer 2 in the element region and on the n++ type layer 1 in the terminal end region. COPYRIGHT: (C)2008,JPO&INPIT
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