III-NITRIDE BASED LIGHT-EMITTING DIODE STRUCTURE WITH MONOLITHICALLY INTEGRATED SIDEWALL DEFLECTORS AND METHOD THEREOF

摘要

This invention relates to light-enitting diode with enhanced surface extraction efficiency, and, above LED has angled mesa sidewall deflectors along the epi layer. The LDE structure with angled mesa sidewall deflectors according to the invention is manufactured by comprising the follwing steps, step for forming a protecting layer on the upper side of IH -nit ride epi layer grown on support substrate! step for forming above protecting layer to hemisphere shape through reflow process; step for forming angled mesa deflector in the sidewall of UJ -nit ride epi layer to correspond with hemisphere shape of sides of protecting layer passing through ICP-RIEC Inductively Coupled Plasma- Reactive Ion Etching) process; and step for exposing Ill-nitride epilayer by removing above protecting layer. According to the present invention, it can form angled mesa sidewall deflector while the conventional manufacturing process of LED can be used as it stands, and also manufacturing is easy. Especially, surface extraction efficiency is improved by 3 times theoretically.