REFERENCE VOLTAGE GENERATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a reference voltage generation device having a flat temperature characteristic.SOLUTION: A reference voltage generation device includes a resistive element 3 to surround a periphery of a first conductivity type depletion type MOS transistor 1 that is connected to function as a current source to supply a constant current and a first conductivity type enhanced type MOS transistor 2 that is in diode connection with the MOS transistor 1, and includes a diode having a current source that can be precisely trimmed under a set temperature environment. A voltage consumed by the resistive element becomes almost constant according to a signal output from the diode, so that the reference voltage generation device can be made to operate under a constant set temperature environment.