| 摘要 |
An integrated circuit includes a composite transistor including at least a first transistor of a first technology type having a first group of intrinsic properties and a second transistor of a second technology type having a second group of the intrinsic properties, at least one of the intrinsic properties of the second group being substantially different than a corresponding intrinsic property of the first group, the second transistor having a first electrode coupled to a supply voltage, a second electrode coupled to a first electrode of the first transistor, and a control electrode coupled to a bias voltage conductor and also coupled to a control electrode and a second electrode of the first transistor. A source of bias current is coupled to the bias voltage conductor and is also coupled to the second electrode of the second transistor. A bias voltage across the composite transistor is produced on the bias voltage conductor to bias a cascode transistor of the first technology type. A signal transistor of the second technology type is coupled to the first electrode of the cascode transistor.
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