发明名称 NONVOLATILE MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile memory structure and a method for forming the same. SOLUTION: This nonvolatile memory structure comprises a plurality of charge storage patterns. An electric coupling distance Lc between adjacent charge storage patterns is formed larger than a linear geometry distance Ls between the adjacent charge storage patterns. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066734(A) 申请公布日期 2008.03.21
申请号 JP20070232766 申请日期 2007.09.07
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI UNKYO
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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