SEMICONDUCTOR SUBSTRATE FOR SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE, AND METHOD FOR MANUFACTURING THEM

摘要

This invention provides a semiconductor substrate for a solid state imaging device, which, as compared with a gettering method using carbon ion implantation, can realize a lower production cost and can eliminate problems involved in a device process, for example, the occurrence of particles. A solid-solution carbon having a concentration of 1 x 10¹⁶ to 1 x 10¹⁷ atoms/cm³ and a solid-solution oxygen having a concentration of 1.4 x 10¹⁸ to 1.6 x 10¹⁸ atoms/cm³ are contained in a silicon substrate.