| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an Si substrate, by which a GaN thin film having good crystallinity and orientability and excellent electrical characteristics and optical characteristics can be efficiently manufactured on an Si single crystal substrate at a low cost. SOLUTION: When a GaN crystal is grown on an AlN layer after sequentially forming an SiC layer and the AlN layer on an Si substrate 12 by a chemical vapor deposition method, the Si substrate 12 having a nitride semiconductor thin film is manufactured by generating nitrogen-based radical by blowing ammonia gas onto a heated mesh-shaped tungsten catalyst 14 and growing the GaN crystal by reacting the generated radical and an organic gallium compound on the AlN layer. COPYRIGHT: (C)2008,JPO&INPIT
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