发明名称 |
Method to manufacture a phase change memory |
摘要 |
Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method may further include forming a second electrode contacting the top surface of the phase change material.
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申请公布号 |
US2008064200(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070983188 |
申请日期 |
2007.11.07 |
申请人 |
JOHNSON BRIAN G;DENNISON CHARLES H |
发明人 |
JOHNSON BRIAN G.;DENNISON CHARLES H. |
分类号 |
H01L21/44;G06F21/00;H01L21/06;H01L21/8234;H01L21/8244 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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