| 摘要 |
PURPOSE:To store minority carriers generated by beams effectively, and to contribute the carriers to an amplification factor by increasing impurity concentration in a region, in which minority carriers are stored and which controls potential barriers. CONSTITUTION:In a semiconductor detecting element, beams are received by a conventional semiconductor detecting element, and two P type semiconductor regions in which minority carriers being generated are stored are constituted by P type low impurity concentration semiconductor region 3b and region 4b receiving beams and P type high impurity concentration semiconductor region 3a and region 4a in which minority carriers being generated are stored and which control potential barriers. Since the semiconductor region 3a and region 4a also function as light-receiving regions, an effective light-receiving area is not reduced, and the effective light-receiving area is quite the same as conventional elements. Accordingly, minority carriers to be generated by beams are stored effectively, and the carriers can contribute to an amplification factor. |
