METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to prevent an edge of an active region from becoming thinner than a center portion of the active region. A first insulating layer(102a) is formed on a semiconductor substrate(100), and then isolation layers(112a,112b) are formed on the substrate to define an active region covered by the first insulating layer. The isolation layer has a sidewall protruded from the surface of the substrate. The first insulating layer is etched to expose a portion of the active region, while the first insulating layer remains on an edge of the active region. A second insulating layer is formed on the active region to form a tunnel insulating layer. The active region is buried by a conductive layer to form gate patterns(118f,118p) between protruded sidewalls of the isolation layers.