| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to prevent the generation of particle. SOLUTION: The semiconductor manufacturing apparatus includes a treatment container which treats a plurality of substrates, a substrate holder which is housed in the treatment container and holds the plurality of substrates, a plasma generating chamber 17 prepared in the side of the substrate holder, a first gas feeder which feeds a first gas into the plasma generating chamber, a second gas feeder which feeds a second gas between the plurality of substrates held in the substrate holder, an electrode which is prepared outside of the treatment chamber and generates plasma by exciting the first gas fed into the plasma generating chamber 17 by inductive coupling, a shield prepared by being grounded between the electrode and the plasma generating chamber 17; an electron supply apparatus which is prepared in the plasma generating chamber 17, and plasma-excites the second gas fed between the substrates by discharging electrons of the plasma generated in the plasma generating chamber 17 between the plurality of the substrates in the treatment chamber. COPYRIGHT: (C)2008,JPO&INPIT
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