发明名称 DRIVING CIRCUIT FOR TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To overcome a trade-off relationship between a surge voltage and a turn-off loss that exists within a transition time period for turning off a transistor, in a circuit for driving the transistor. <P>SOLUTION: A driving circuit 10 comprises a variable resistor R12 that is electrically connected to a gate electrode G of a transistor 20. A width of a current path of the variable resistor R12 is controlled by a depletion layer which is expandable in accordance with a drain-source voltage Vds of the transistor 20. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008054280(A) 申请公布日期 2008.03.06
申请号 JP20070073381 申请日期 2007.03.20
申请人 TOYOTA CENTRAL R&D LABS INC;DENSO CORP 发明人 HATSUTORI YOSHIKUNI;KUWABARA MAKOTO;OKADA KYOKO;MIZUNO SHOJI;AOKI TAKAAKI;TAKAHASHI SHIGEKI;AKAGI NOZOMI;NAKANO TAKASHI
分类号 H03K17/08;H01L21/822;H01L27/04;H03K17/06;H03K17/695 主分类号 H03K17/08
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