发明名称 Expanded silicon substrate for the production of sensors/solar cell or for the production of further substrates, consists of monocrystalline regions having a uniform crystal orientation to its respective surface-normal
摘要 <p>The expanded silicon substrate (10) for the production of sensors or solar cell, or for the production of further substrates with a thickness d of 0.1-100 mu m and width and length of 1 cm, consists of monocrystalline regions (1a, 1b, 1c) with a length- and a width expansion of 1 cm. The regions have a uniform crystal orientation to its respective surface-normal (13) with a deviation of 5[deg]. The expansion of the planar substrate is 0.5 m in a longitudinal direction (12) and its mechanical characteristics permit a reversible winding on a cylinder surface (14) with a diameter of 5 m. The expanded silicon substrate (10) for the production of sensors or solar cell, or for the production of further substrates with a thickness d of 0.1-100 mu m and width and length of 1 cm, consists of monocrystalline regions (1a, 1b, 1c) with a length- and a width expansion of 1 cm. The regions have a uniform crystal orientation to its respective surface-normal (13) with a deviation of 5[deg]. The expansion of the planar substrate is 0.5 m in a longitudinal direction (12) and its mechanical characteristics permit a reversible winding on a cylinder surface (14) with a diameter of 5 m. The monocrystalline regions have an expansion of 3 cm. The length of the foil substrate is 3 m. The foil is wound reversibly on the cylinder surface with a diameter of 2 m. The substrate has an unrolled length of 10 m and width of 0.1-10 m. The crystal orientation is predominantly {100} toward the normal of the substrate surface in the respective place with a disorientation of 5[deg]. The grain boundaries are found on a regular lattice or are located in a surface of 1 cm around the grid lines of the lattice. The grid line distance is 3 cm, and other substrate areas are free of grain boundaries. Within the ranges mentioned around the grid lines, a crystal defect density is increased or deviation of the plane parallelism of the surfaces is increased or dispersion of the substrate thickness is increased. The crystal orientations in longitudinal direction of the individual pieces of substrate have same values (within a deviation of 5[deg]). The foil substrate is part of a solar module in cut form. The foil contained in the module on both surfaces, has a random pyramidal structure with an expansion of the pyramid of 0.1-10 mu m. The foil is attached on a glass-, ceramic- or metal plate and the attachment is interfered between the silicon foil and the plate by aluminum or silver containing material. An independent claim is included for a procedure for the production of an expanded silicon substrate.</p>
申请公布号 DE102006037652(A1) 申请公布日期 2008.02.14
申请号 DE20061037652 申请日期 2006.08.10
申请人 BAYERISCHES ZENTRUM FUER ANGEWANDTE ENERGIEFORSCHUNG ZAE BAYERN E.V. 发明人 KUNZ, THOMAS;BURKERT, INGO
分类号 C30B29/64;C30B29/06;H01L21/30 主分类号 C30B29/64
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