METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND PLATING TREATMENT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device capable of performing the control of plating film thickness at high precision, and to provide a plating treatment device therefor. SOLUTION: In the method for producing a semiconductor device comprising a process where a plurality of recessed parts provided at an insulation film formed on a semiconductor substrate are buried with an electrically conductive material by plating treatment, the plating process includes a stage (S104) where, when the fine recessed parts with a prescribed width or below in a plurality of the recessed parts are buried with the electrically conductive material, plating treatment is performed at the first current density obtained by compensating the prescribed first standard current density based on a surface area ratio Sr=S1/S2between the first surface area S1including the areas of the side walls in a plurality of the respective recessed parts in the whole face of the semiconductor substrate and the second surface area S2not including the areas of the side walls in a plurality of the respective recessed parts. COPYRIGHT: (C)2008,JPO&INPIT