发明名称 |
MIS transistors with different gate electrodes or gate oxides and method for manufacturing the same |
摘要 |
<p>A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes: a first gate insulating film (4) formed on a first active region (1a) of a substrate (1); and a first gate electrode (7A) formed on the first gate insulating film (4). The second MIS transistor includes: a second gate insulating film (6) formed on a second active region (1b) of the substrate (1) and having a dielectric constant lower than the first gate insulating film (4); and a second gate electrode (7B) formed on the second gate insulating film (6). Insulating sidewall spacers (8A,8B) having the same structure are formed on respective side faces of the first gate electrode (7A) and the second gate electrode (7B).</p> |
申请公布号 |
EP1887619(A2) |
申请公布日期 |
2008.02.13 |
申请号 |
EP20070113682 |
申请日期 |
2007.08.02 |
申请人 |
PANASONIC CORPORATION |
发明人 |
HIRASE, JUNJI;SATO, YOSHIHIRO |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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