| 摘要 |
A circuit for generating a Vpp of a semiconductor memory apparatus is provided to generate a pumping voltage without voltage down and to stop pumping operation in a standby mode. A sensing signal generation unit(10) generates a sensing signal by comparing a pumping voltage with a reference voltage. A pumping unit(20) pumps a second external voltage in response to the sensing signal, and boosts a first external voltage as much as the pumped voltage and then outputs the boosted first external voltage as the pumping voltage. The second external voltage is lower than the first external voltage level.
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