发明名称 ZINC SELENIDE POLYCRYSTAL AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a zinc selenide polycrystal by which a matter to be treated can be appropriately processed when a lens formed by the zinc selenide polycrystal is used for an optical component for a carbon dioxide laser and to provide its manufacturing method. SOLUTION: When the zinc selenide polycrystal is synthesized by a CVD method, a zinc vapor from a metal zinc 6 generated in a zinc vapor generating chamber 4 is supplied to a reaction chamber 12 together with a carrier gas. A gaseous hydrogen is supplied to a hydrogen selenide synthesizing chamber 5 in a state housing a starting material of an acceptor impurity in a molten bath 10 housing a metal selenium 9 and an H<SB>2</SB>Se gas synthesized in a hydrogen selenide synthesizing chamber 5 is supplied to the reaction chamber 12 together with an unreacted gaseous hydrogen. Thus, the zinc selenide polycrystal wherein the acceptor impurity is doped is synthesized when the zinc selenide polycrystal is synthesized by the reaction of a zinc vapor and the hydrogen selenide in the reaction chamber 12. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008013414(A) 申请公布日期 2008.01.24
申请号 JP20060188239 申请日期 2006.07.07
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KURISU KENICHI
分类号 C01B19/04;C23C16/30 主分类号 C01B19/04
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