| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which wiring for a pre-decode signal laid between banks can be eliminated. SOLUTION: The semiconductor memory device is provided with a plurality of banks #0 to #3, pre-decoders 101 to 104 generating pre-decode signals, first latch circuits 112, 113 assigned to the respective banks, holding a first part of the pre-decode signal, and a main decoder 121 assigned in common with respect to the two banks for receiving a second part of the pre-decode signal and an output of a first latch circuit. The main decoder 121 includes a latch circuit for holding decode signals obtained by decoding the second part of the pre-decode signal at each bank. Since the pre-decoder of an address through type is used and the pre-decoded signal is latched, a part of the pre-decode signal can be shared between and among the banks. COPYRIGHT: (C)2008,JPO&INPIT
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