发明名称 EQUIPMENT FOR CONTROLLING WAFER TEMPERATURE OF SEMICONDUCTOR ETCHING DEVICE
摘要 A device for controlling wafer temperature in a semiconductor etching system is provided to prevent defects of a wafer due to cooling errors by controlling a flow rate of helium corresponding to the temperature of the wafer. An electrostatic chuck(40) comprises a helium gas inlet and a helium gas outlet for cooling a wafer. A temperature detection sensor senses the temperature of the wafer loaded on the electrostatic chuck. A conversion unit(50) converts a temperature value sensed from a probe sensor to a numerical value, and compares the sensed temperature value with predetermined temperature value in order to output a helium flow control signal. A monitor(52) displays the numerical temperature value. A control unit(56) for helium gas flow rate is installed at a helium supply line in order to control a helium gas flow rate.
申请公布号 KR20080006734(A) 申请公布日期 2008.01.17
申请号 KR20060065834 申请日期 2006.07.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, HYUN UK
分类号 H01L21/3065 主分类号 H01L21/3065
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