| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor structure having a "low hot carrier effect characteristic" that can prolong the life time of an OLED driving IC having a transistor, by decreasing the extent of the "hot carrier effect" when the transistor structure of a semiconductor is in operation. SOLUTION: The semiconductor structure comprises a substrate, a metal layer, an insulation layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer has a first electric resistance value and covers at least parts of the surface of the insulating layer, and the second semiconductor layer has a second electric resistance value and covers at least parts of the surface of the insulating layer. The second electric resistance value of the second semiconductor layer is larger than the first electric resistance value of the first semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT
|
