| 摘要 |
PROBLEM TO BE SOLVED: To improve a driving current of an MOSFET by controlling distortion of a channel region without restriction on element design or due to other processes. SOLUTION: A PMOSFET 100 is formed on an active region segmented by an element isolation insulating film 16, and a stress providing film 17 for applying a compression stress in a gate length direction on the channel region of the PMOSFET 100 is formed on the upper part of the element isolation film 16. That means, a trench is formed in parallel to a gate electrode 13 on the upper part of the element isolation insulating film 16 so as to sandwich the gate electrode 13, and the trench is buried by the stress providing film 17 formed by thermal oxidation of the amorphous silicon. COPYRIGHT: (C)2008,JPO&INPIT
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