| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor processing device and a vapor processing method for carrying out vapor process of polysilicon TFT, SiO<SB>2</SB>gate insulating film and the like easily under high pressure. SOLUTION: The vapor processing device is provided with a pressure container 11 for processing a processing material 21 under predetermined pressure P, and a temperature control means 12 for separating the inside of the pressure container 11 under control into at lest two different temperature regions. The pressure container 11 has a first region 13 set at a predetermined temperature T1 for processing the processing material 21 under predetermined vapor pressure P, and a second region 14 set at a predetermined temperature T2 lower than that of the first region 13 for generating saturation vapor under pressure P equal to the vapor pressure P so that the above mentioned subject is solved. COPYRIGHT: (C)2008,JPO&INPIT
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