发明名称 |
Semiconductor device and method of operating a semiconductor device |
摘要 |
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are also provided. One or more drive circuits provide appropriate voltages to the first and second insulated gate terminals so as to allow current conduction in a first direction or in a second direction that is opposite the first direction.
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申请公布号 |
US2008012043(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20060486377 |
申请日期 |
2006.07.14 |
申请人 |
CAMBRIDGE SEMICONDUCTOR LIMITED |
发明人 |
UDREA FLORIN;UDUGAMPOLA NISHAD;AMARATUNGA GEHAN A.J. |
分类号 |
H01L29/74;H01L29/45;H01L29/76 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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