发明名称 |
CMOS Devices Adapted to Prevent Latchup and Methods of Manufacturing the Same |
摘要 |
In a first aspect, a first apparatus is provided. The first apparatus is a semiconductor device on a substrate that includes (1) a first metal-oxide-semiconductor field-effect transistor (MOSFET); (2) a second MOSFET coupled to the first MOSFET, wherein portions of the first and second MOSFETs form first and second bipolar junction transistors (BJTs) which are coupled into a loop; and (3) a conductive region that electrically couples a source diffusion region of the first or second MOSFET with a doped well region below the source diffusion region. The conductive region is adapted to prevent an induced current from forming in the loop. Numerous other aspects are provided.
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申请公布号 |
US2008006855(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20060456357 |
申请日期 |
2006.07.10 |
申请人 |
MANDELMAN JACK A;TONTI WILLIAM R |
发明人 |
MANDELMAN JACK A.;TONTI WILLIAM R. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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