NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device in which the structure thereof has been so improved as to possess high light emission efficiency at a wavelength region corresponding to blue light and those having wavelengths longer than thereof.

SOLUTION: The light-emitting device comprises an active layer and a laminated structure having an n-type optical guide layer 32 on one side of the active layer and a p-type optical guide layer on the other side of the active layer, wherein the active layer comprises a well layer 16 formed of Inx1Ga(1-x1)N (0x2Ga(1-x2)N (0≤x2<1) on both sides of the well layer, and diffusion preventing layers 14 for preventing diffusion of indium formed between the well layer and the barrier layers.

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