SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To reduce the contact resistance of an ohmic electrode provided on the rear-surface side of a silicon carbide bulk substrate, in a semiconductor element having the silicon carbide bulk substrate. SOLUTION: The semiconductor element 700 has a first conductivity-type silicon carbide bulk substrate 1 having a principal surface 1p and a rear surface 1r; and has a first conductivity-type high concentration impurity epitaxial layer 3 which is formed on the rear surface 1r of the silicon carbide bulk substrate 1, and contains the impurity with a concentration higher than the one of the silicon carbide bulk substrate 1. COPYRIGHT: (C)2008,JPO&INPIT