发明名称 |
Method of making a self-aligned ferroelectric memory transistor |
摘要 |
<p>A method of making a self-aligned ferroelectric memory transistor includes preparing a substrate, shallow trench isolation, n the polysilicon; and forming a gate stack, including: depositing a layer of silicon nitride; selectively etching the silicon nitride, the bottom electrode and the polysilicon; selectively etching the polysilicon to the level of the first dielectric layer; and implanting and activating ions to form a source region and a drain region; forming a sidewall barrier layer; depositing a layer of ferroelectric material; forming a top electrode structure on the ferroelectric material; and finishing the structure, including passivation, oxide depositing and metallization.
</p> |
申请公布号 |
EP1302978(A3) |
申请公布日期 |
2008.01.09 |
申请号 |
EP20020023155 |
申请日期 |
2002.10.15 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HSU, SHENG TENG;LI, TINGKAI;ZHANG, FENGYAN |
分类号 |
H01L21/28;H01L27/105;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L29/788;H01L27/115;H01L29/51;H01L29/78;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|