| 摘要 |
<p>An exposure mask and a lithography method using the same are provided to prevent generation of patterns in a defect induction region by using a die open mark in a lithography process for an edge field region of a wafer in field units. An edge field mask(130) is formed to expose an edge region of a wafer(100). The edge field mask corresponding to a defect induction region of a wafer edge part includes a die open mark(140). The die open mark is formed with one of a binary mask, a phase shift mask, and a combination mask of the binary mask and the phase shift mask. The edge field mask includes only the die open mark. The edge field mask is formed by coupling the die open mark with a main field mask(120). A lithography method includes a first exposure process for exposing the entire surface of the wafer in field units, a second exposure process for exposing the defect induction region in die units in the edge field region, and a developing process for developing the entire surface of the wafer.</p> |
