MICROWAVE PLASMA PROCESSING DEVICE

摘要

[PROBLEMS] To provide a plasma processing device which can generate plasma having an excellent feature and control it and which is appropriate for processing such as thin film formation and etching. [MEANS FOR SOLVING PROBLEMS] A microwave plasma processing device (1) includes: a vacuum container (105) having a processing chamber (10) containing a substrate (106) and a dielectric window (104) hermetically arranged, through which a microwave can pass; a dielectric antenna (102) for introducing a microwave propagating through a waveguide (101) into the vacuum container (105); and a conductive plate (203) arranged along the dielectric window (104) in the processing chamber (10). An internal vessel (201) is arranged in the processing chamber (10). A plurality of conductors (202) are arranged in the internal vessel (201). An electric lead line (210) is arranged in each of the conductor plate (203), the internal vessel (201), and the plurality of conductors (202). Switches (211, 212, 213) have first ends connected to the electric lead line (210) and second ends connected to a grounding circuit outside the vacuum container (105).