BILAYER HDP CVD / PE CVD CAP IN ADVANCED BEOL INTERCONNECT STRUCTURES AND METHOD THEREOF

摘要

AN ADVANCED BACK-END-OF-LINE (BEOL) METALLIZATION STRUCTURE IS DISCLOSED. THE STRUCTURE INCLUDES A BILAYER DIFFUSION BARRIER OR CAP, WHERE THE FIRST CAP LAYER (116, 123) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION (HDP CVD) PROCESS, AND THE SECOND CAP LAYER (117, 124) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD) PROCESS. A METHOD FOR FORMING THE BEOL METALLIZATION STRUCTURE IS ALSO DISCLOSED. THE INVENTION IS PARTICULARLY USEFUL IN INTERCONNECT STRUCTURES COMPRISING LOW-K DIELECTRIC MATERIAL FOR THE INTER-LAYER DIELECTRIC (ILD) AND COPPER FOR THE CONDUCTORS.