发明名称 |
METHOD OF PLASMA ETCHING WITH PATTERN MASK |
摘要 |
<p>The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metaloxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide.</p> |
申请公布号 |
SG137748(A1) |
申请公布日期 |
2007.12.28 |
申请号 |
SG20070028210 |
申请日期 |
2007.04.17 |
申请人 |
ADVANCED CHIP ENGINEERING TECHNOLOGY INC. |
发明人 |
YANG WEN-KUN;CHANG JUI-HSIEN;SUN WEN- BIN |
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