| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and an electronic module which are capable of adjusting the characteristics thereof, and to provide the manufacturing method of them. SOLUTION: An integrated circuit which includes an n-channel and p-channel electric field effect transistors 20 is formed in a semiconductor chip 10, then, a pad 12 is formed so as to be connected electrically to the integrated circuit while a first bump 41 is formed on the pad 12. The operating speed of the integrated circuit is measured. When the operating speed is so measured that the same is slower than a reference value, a second bump 42 is provided above the channel 26 of the n-channel electric field effect transistor 20. When the operating speed is so measured that the same is quicker than the reference value, the second bump 42 is provided above the channel 26 of the p-channel electric field effect transistor 20. COPYRIGHT: (C)2008,JPO&INPIT
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