发明名称 |
Flash Memory Process with High Voltage LDMOS Embedded |
摘要 |
A method of embedding the forming of peripheral devices such as HV-LDMOS into the forming of flash memory is presented. A layered structure is formed with a first insulating layer formed on a substrate, and a poly silicon formed on the first insulating layer in the flash memory region. A mask layer is formed. Openings are formed in the flash memory region in the peripheral region. A local oxidation of silicon (LOCOS) is performed to form thick oxides on poly silicon, and a field oxide on silicon substrate respectively. The mask layer is removed. A control gate and a control gate oxide are formed on the thick oxide and the poly silicon. A gate electrode is formed with at least one end residing on a field oxide so that the resulting HV-LDMOS has a high breakdown voltage. Spacers and a source/drain of the flash cells and HV-LDMOSs are then formed.
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申请公布号 |
US2007296022(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20070848066 |
申请日期 |
2007.08.30 |
申请人 |
LU HSIANG-TAI;KUO CHENG-HSIUNG;WANG CHIN-HUANG |
发明人 |
LU HSIANG-TAI;KUO CHENG-HSIUNG;WANG CHIN-HUANG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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