发明名称 A METHOD OF FABRICATING POLYCRYSTALLINE SILICON LAYER
摘要 A method for manufacturing a poly crystalline silicon layer is provided to perform continuous laser irradiation processes, after coating a liquid silane, thereby reducing process time, and solving a substrate limitation problem because of a high temperature process. A silane polymer layer is formed by coating a liquid silane polymer(S1). An amorphous silicon layer is formed by irradiating a first laser to the silane polymer layer(S2). A poly crystalline silicon layer is formed by irradiating a second laser to the silane polymer layer(S3). The liquid silane polymer is a cyclopentane(C5H10).
申请公布号 KR20070120839(A) 申请公布日期 2007.12.26
申请号 KR20060055617 申请日期 2006.06.20
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM, JAE HYUN;CHAE, GEE SUNG
分类号 H01L21/324;H01L21/477 主分类号 H01L21/324
代理机构 代理人
主权项
地址