| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element using an SiC substrate wherein a p electrode and an n electrode are opposed to each other, and capable of stabilizing a drive voltage by reducing carrier depletion due to spontaneous polarization and piezoelectric polarization caused on a boundary of a semiconductor layer. <P>SOLUTION: A nitride semiconductor crystal 7 is formed on an M plane (10-10) of the SiC substrate 1 by the MOCVD method or the like, and the growth surface is grown on the M plane. Since the M plane is not a Ga polarization plane and an N (nitrogen) polarization plane, but a non-polar plane, the effect of an electric field caused by spontaneous polarization and piezoelectric polarization can be much reduced. Further, since the conductive SiC substrate 1 is employed, the nitride semiconductor light emitting element can be formed wherein the p electrode and the n electrode are opposed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
