发明名称 |
Method of Forming Gate Insulating Film, Semiconductor Device and Computer Recording Medium |
摘要 |
In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
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申请公布号 |
US2007290247(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20050718292 |
申请日期 |
2005.10.27 |
申请人 |
NISHITA TATSUO;ISHIZUKA SHUUICHI;FUJINO YUTAKA;NAKANISHI TOSHIO;SATO YOSHIHIRO |
发明人 |
NISHITA TATSUO;ISHIZUKA SHUUICHI;FUJINO YUTAKA;NAKANISHI TOSHIO;SATO YOSHIHIRO |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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