| 摘要 |
<p>Disclosed is a semiconductor device comprising a gate electrode (31) formed on a semiconductor substrate (10), an ONO film (18) which is formed between the gate electrode and the semiconductor substrate and has a charge storage region located below the gate electrode (31), and a bit line (28) which is buried in the semiconductor substrate (10) and includes a low-concentration diffusion region (24), a high-concentration diffusion region (22) formed in the central portion of the low-concentration diffusion region (24) and having a higher impurity concentration than the low-concentration diffusion region (24), a source region and a drain region. In this semiconductor device, the source/drain withstand voltage is improved and fluctuation of electrical characteristics or junction current between the bit line and the semiconductor substrate is suppressed.</p> |
