发明名称 Semiconductor memory device, a local precharge circuit and method thereof
摘要 A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The example local precharge circuit may be included within the example semiconductor memory device. The example semiconductor memory device including the example local precharge circuit may be capable of adjusting a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal, the active mode referring to a period where a word line is enabled.
申请公布号 US2007280018(A1) 申请公布日期 2007.12.06
申请号 US20060523052 申请日期 2006.09.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SOON-SEOB;KIM DAE-JOON;HYEON DONG-HO
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
代理机构 代理人
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