| 发明名称 |
Method for modulating the effective work function |
| 摘要 |
A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. A method for its manufacture is also provided and its applications. |
| 申请公布号 |
EP1863072(A1) |
申请公布日期 |
2007.12.05 |
| 申请号 |
EP20060447072 |
申请日期 |
2006.05.29 |
| 申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC);NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
PANTISANO, LUIGI;SCHRAM, TOM;DE GENDT, STEFAN |
| 分类号 |
H01L21/28;H01L29/49;H01L29/51 |
主分类号 |
H01L21/28 |
| 代理机构 |
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