| 摘要 |
The technology disclosed relates to immersion lithography, in particular to the exposure of masks by deep and vacuum ultraviolet wavelengths with so-called sub-wavelength resolution. It also is likely to be useful for other methods of sub-wavelength lithography such as lithography on silicon wafers, surface-acoustic wave (SAW) and diffractive optical devices. In particular, it relates to controlling the contact angle between the immersion fluid and the top-most layer of the substrate, which is in contact with immersion fluid, by tuning the surface energy of the top-most layer and properties of the immersion fluid. It is useful to control this interface, in which issues such as entrainment of bubbles in the immersion fluid and puddles of fluid remaining after immersion have been encountered.
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