| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a CM (Condenser Microphone) can be reduced in circuit area. SOLUTION: The semiconductor device 100 is equipped with an electrostatic induction transistor 32, and an electrostatic capacitor 30 provided on the first surface of the electrostatic induction transistor 32. The electrostatic induction transistor 32 is of a vertical MOS structure equipped with a trench gate, the electrostatic capacitor 30 is formed on the surface of the electrostatic induction transistor 32, and a capacitance insulating film is formed on a source region and connected between a source electrode and a drain electrode. COPYRIGHT: (C)2008,JPO&INPIT
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