发明名称 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same
摘要 <p>A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor are provided. The capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13.</p>
申请公布号 EP1855310(A2) 申请公布日期 2007.11.14
申请号 EP20070114231 申请日期 2002.10.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JUNG-HYUN;MIN, YO-SEP;CHO, YOUNG-JIN
分类号 H01L21/02;H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/06;H01L27/105;H01L27/108;H01L29/788;H01L29/792 主分类号 H01L21/02
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