发明名称 |
Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
摘要 |
<p>A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor are provided. The capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13.</p> |
申请公布号 |
EP1855310(A2) |
申请公布日期 |
2007.11.14 |
申请号 |
EP20070114231 |
申请日期 |
2002.10.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUNG-HYUN;MIN, YO-SEP;CHO, YOUNG-JIN |
分类号 |
H01L21/02;H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/06;H01L27/105;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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