发明名称 |
Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area |
摘要 |
<p>The component has a semiconductor body (1) of conduction type in an active area (2) and a peripheral area (3). The peripheral area has a reduced surface field (RESURF) semiconductor layer extending outward laterally from active area. The endowment strength of RESURF-semiconductor layer is smaller than endowment strength of part of active area, which directly adjoins to peripheral area borders. A circular semiconductor area of former conduction type, embedded in the RESURF-semiconductor layer, is provided at a distance from each other. Each circular semiconductor area encloses active area.</p> |
申请公布号 |
DE102006023598(B3) |
申请公布日期 |
2007.11.08 |
申请号 |
DE20061023598 |
申请日期 |
2006.05.19 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHMIDT, GERHARD |
分类号 |
H01L29/06;H01L29/739;H01L29/74;H01L29/80;H01L29/861 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|