发明名称 Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area
摘要 <p>The component has a semiconductor body (1) of conduction type in an active area (2) and a peripheral area (3). The peripheral area has a reduced surface field (RESURF) semiconductor layer extending outward laterally from active area. The endowment strength of RESURF-semiconductor layer is smaller than endowment strength of part of active area, which directly adjoins to peripheral area borders. A circular semiconductor area of former conduction type, embedded in the RESURF-semiconductor layer, is provided at a distance from each other. Each circular semiconductor area encloses active area.</p>
申请公布号 DE102006023598(B3) 申请公布日期 2007.11.08
申请号 DE20061023598 申请日期 2006.05.19
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 SCHMIDT, GERHARD
分类号 H01L29/06;H01L29/739;H01L29/74;H01L29/80;H01L29/861 主分类号 H01L29/06
代理机构 代理人
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