A SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided to form a storing capacitor having a large capacitance by a small area within a pixel part of an electro-optics device, thereby keeping a sufficient storage capacitor without reducing aperture ratio. A transistor includes a single crystal silicon film(102) and a gate electrode. The single crystal silicon film is formed on an insulating surface of a substrate(100). And the single crystal silicon film comprises a pair of impurity regions and a channel region located between the impurity regions. The gate electrode is formed on the channel region, and a gate insulating layer is inserted between the channel region and the gate electrode. And the gate electrode comprises a first and a second conductive layer.