| 摘要 |
In a solid-state image pick-up device comprising photoelectric converting devices 3 r , 3 g and 3 b formed at a predetermined array interval in row and column directions on a semiconductor substrate, vertical transfer paths 4 a , 4 b , 4 c, . . . provided in the column direction of the photoelectric converting device and serving to read and transfer a signal charge obtained by the photoelectric converting device, and a shielding film for covering an upper part of the vertical transfer path, a pore 7 is provided in a place corresponding to an imaginary pixel point position in the shielding film. Consequently, an actual signal (an imaginary pixel point charge) corresponding to the amount of a received light on the imaginary pixel point through the pore 7 is stored in the vertical transfer path. Therefore, the imaginary pixel point charge is read from the solid-state image pick-up device before the signal charge is read from the photoelectric converting device, and image data based on the signal charge are corrected by the actual imaginary pixel point charge. Thus, it is possible to generate an image having a high resolution.
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