METHOD OF FLATTENING SILICON FILM SURFACE DURING AND AFTER PROCESSING THROUGH SEQUENTIAL LATERAL CRYSTALLIZATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a system and method for reducing the surface roughness of a polycrystalline or monocrystalline thin film produced by a sequential lateral solidification process. SOLUTION: The system comprises: an excimer laser 110 for generating a plurality of excimer laser pulses of a predetermined fluence; an energy density modulator 120 for controllably modulating the fluence of the excimer laser pulses to obtain a fluence required to perfectly melt the thin film in the thickness direction or lower; a beam equalizer 144; a sample stage 170 for melting a portion corresponding to the laser pulses of the thin film; a parallel motion means for controllably moving in parallel the position of the sample stage 170 relative to the laser pulses; and a computer 100 for performing the generation of the excimer pulses and modulation of the fluence in accordance with the relative position of the sample stage 170, and thereby processing the polycrystalline or monocrystalline thin film by sequentially moving the sample stage 170 in parallel with the laser pulses. COPYRIGHT: (C)2008,JPO&INPIT